hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 1/9 H211 hsmc product specification H211 2 phase dc motor drive ic general description the H211, a one-chip composed of hall sensor and output coil drivers, applied to 2-phase brush-less dc motor. the device includes an on-chip hall sensor for magnetic sensing, an amplifier that amplifies the hall voltage, a schmitt trigger to provide switch hysteresis for noise rejection, a temperature compensation circuit to compensate the temperature drift of hall sensitivity, two complementary open-collector drivers for sinking large load current. it also includes an internal band-gap regulator which is used to provide bias voltage for internal circuits. the high sensitivity of hall effect sensor is suitable for motors from mini-type cpu coolers to blowers and dc fans. typical operation current is 0.3a with wide range of oper ating voltage. fg single, an open collector, provides a square waveform output for the detection of the motor speed. place the device in a variable magnetic field, while the magnetic flux density is larger than threshold b op , no will be turned on (low) and so (and fg) will be turned off (high). this output state is held till the magnetic flux density reversal falls below b rp causing no to be turned off (high) and so (and fg) turned on(low). features ? on-chip hall sensor/drivers ? 4v to 20v supply voltage ? output sink current up to 0.4a ? low quiescent supply current under 5ma ? built-in fg output ? low profile to-94 (sip-4l) package typical application circuit c1, c2, r2, r3 is optional for reduce electromagnetism noise. r2, r3 must be greater than 50 ohm. fig.2 H211 typical application circuit
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 2/9 H211 hsmc product specification pin configuration pin no. pin name p/i/o description 1 fg o rotation speed output (o.c.) 2 no o/p coil driver output/power input. it is low state during the n magnetic field. 3 so o/p coil driver output/power input. it is low state during the s magnetic field. mark view 4 gnd p ic ground block diagram fig.3 functional block diagram of H211
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 3/9 H211 hsmc product specification absolute maximum ratings characteristics symbol va l u e unit zener breakdown voltage v z 35 v no/so pin voltage v o 30 v hold 500 ma output current continuous i o 350 ma peak reverse current i r 100 ma fg pin off voltage v fg 30 v fg sink current i fg 20 ma p d (ta=25 ) 600 mw power dissipation p d (ta=70 ) 450 mw operating temperature range t op -20~85 storage temperature range t s -65~150 junction temperature t j 150 lead temperature (soldering 10 sec) 260 electrical characteristics parameter symbol test condition min typ max unit operating voltage v cp i cc < 10ma (fig.1) 4 20 v quiescent supply current i cc v cc : 3~20v (fig.1) 2 7 ma no/so saturation voltage v sat io=300ma (fig.1) 1.5 v fg leakage current i off v fg=30v (fig.1) 1 ua fg saturation voltage i on i fg=5ma (fig.2) 0.2 0.5 v rise time t r rl=1k cl=10pf 3.0 10 us fall time t f rl=1k cl=10pf 0.3 10 us note: no use pin is open when the device is under test. magnetic characteristics (t a =-20 85) characteristics symbol min max unit rank operate point b op 5 50 g H211a release point b rp -50 -5 g a operate point b op - 70 g H211b release point b rp -70 - g b operate point b op - 90 g H211c release point b rp -90 - g c operate point b op - 130 g H211d release point b rp -130 - g d
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 4/9 H211 hsmc product specification fig.4 v no vs. magnetic flux density fig.5 v so vs. magnetic flux density typical performance characteristics fig.6 i cc vs. v cc fig.7 b op / b rp / b hys vs. v cc fig.8 b op / b rp / b hys vs. ambient temperature fig.9 p d vs. ambient temperature
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 5/9 H211 hsmc product specification typical performance characteristics (continued) fig.10 v sat vs. ambient temperature est circuits fig.11 test circuit 1 (under n magnetic field) fig.12 test circuit 2 t
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 6/9 H211 hsmc product specification application information 1). hall sensor location cation, where marks the ic number. the best sensitivity, which can be intensified as the fig.13 is the hall sensor lo much as possible, depends on the vertical dist ance and position between magnetic pole and the hall sensor (fig.14). for the 2-phase motor, this design is very important. fig.13 H211 hall sensor location 2). darlington-pair transistor output the fig.15 is the circuit diagram of darlington -pair transistor. under the heavy current loading, the power loss of the q1 e(sat)q2 qqq (1) accord e curve of the power loss, the p c should be ap d to and within the safety value. high saturation voltage can be calculated into the following formula: p =(v +v )*i qqqqqqqqqqqqqqqqq c be c o ing to the ic package and th plie 30v is the voltage of zener breakdown diode. however, if the voltage, excluding that of the power supply, is more than 30v under the long-time operation, the diode will be destroyed, and meanwhile, the device will de destroyed.
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 7/9 H211 hsmc product specification fig.15 H211 darlington-pair transistor output 3). fg output: the circuit diagra m of open collector transistor fig.16 the small signal transistor output connected with the pull-up resistance is to limit the current and confirm the voltage level of rotation speed. the situation of the long-time operation with the high voltage or with the high current will do damage to the transistor and cause fg malfunction. fig.17 illustrates the relation between dynamic magnetic field and fg. fig.16 H211 fg circuit diagram fig.17 H211 fg waveform 4). application note fig.18 is the example of typical application circuit. the red, yellow, and black wires are the input points of the motor system: red, the input of power supply; yellow, the output of fg; black, the ground signal. r c is an external pull-up resistance for the use of measuring fg signal. in view of the design, the value of r c could be decided by the transistor saturation voltage (von), sink current (ic), and off-level voltage (vc). the formula is: rc=(vc-von)/ic qqqqqqqqqqqqqqqqqqqq (2) for example vc=+5v for ttl level, ic=5ma at 0.5v saturation voltage (ic specification).
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 8/9 H211 hsmc product specification the safety value of rc=1k ?. d1 is the reverse protection diode. as if the red and black wires reversely are connected with the power source, the current will flow through the ground via ic and coils l1 and l2 to power supply. under such kind of circumstance, the ic and coils are easy to be burned out. therefore, d1, the reverse protection diode, is necessary for the design. however, d1 will also cause an extra voltage drop on the supply voltage. c1 is a capacitor to reduce the ripple noise caused during the transient of the output stages. the volume of the ripple noise depends on the coil impedance and characteristics. fig.18 H211 typical application circuit
hi-sincerity microelectronics corp. spec. no. : ic200918 issued date : 2009.09.14 revised date : 2009.10.29 page no. : 9/9 H211 hsmc product specification package dimensions a b c a1 a2 d e f g h marking site a1 j i k a2 e 12 34 l dim min. max. marking: note: green label is used for pb-free packing pin style: 1.vcc 2.vout1 3.vout2 4.gnd hall sensor location: 2.00m m 1.25mm to p view material: ? lead solder plating: sn60/pb40 (normal), sn/3.0ag/0.5cu or pure-tin (pb-free) ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 a 5.12 5.32 b 4.10 4.30 c 3.55 3.75 d 0.43 0.49 e 0.35 0.41 f 1.24 1.30 g 3.78 3.84 h 1.32 1.52 i 1.45 1.65 j 0.93 1.13 k 13.00 15.50 l a1 3 o 5 o a2 5 o 7 o *: typical, unit: mm 4-lead sip-4l plastic package hsmc package code: ad important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of avantic. ? hsmc reserves the right to make changes to its products without notice. ? hsmc semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? hsmc assumes no liability for any consequence of customer prod uct design, infringement of paten ts, or application assistance. head office: ? head office (hi-sincerity microelectronics corp.): 5/f., golden harvest building 15 wang chiu road, kowloon bay, hong kong tel: +852-2755-7162 fax: +852-2755- 7795 avantics : shanghai address: no.399, cai lum rd. zhang jiang technology industrial park pudong, shanghai 201210, china tel: +86(21) 61637118 fax: +86(21)61637006
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